ds30163 rev. 5 - 2 1 of 3 mmst4124 www.diodes.com ? diodes incorporated mmst4124 npn small signal surface mount transistor ? epitaxial planar die construction ? complementary pnp type available (mmst4126) ? ideal for medium power amplification and switching ? ultra-small surface mount package ? available in lead free/rohs compliant version (note 2) characteristic symbol mmst4124 unit collector-base voltage v cbo 30 v collector-emitter voltage v ceo 25 v emitter-base voltage v ebo 5.0 v collector current - continuous (note 1) i c 200 ma power dissipation (note 1) p d 200 mw thermal resistance, junction to ambient (note 1) r ja 625 k/w operating and storage and temperature range t j ,t stg -55 to +150 c features maximum ratings @ t a = 25 c unless otherwise specified a m j l e d b c h k g b e c mechanical data ? case: sot-323 ? case material: molded plastic. ul flammability classification rating 94v-0 ? moisture sensitivity: level 1 per j-std-020c ? terminal connections: see diagram ? terminals: solderable per mil-std-202, method 208 ? also available in lead free plating (matte tin finish annealed over alloy 42 leadframe). please see ordering information, note 5, on page 2 ? marking (see page 2): k1b ? ordering & date code information: see page 2 ? weight: 0.006 grams (approximate) sot-323 dim min max a 0.25 0.40 b 1.15 1.35 c 2.00 2.20 d 0.65 nominal e 0.30 0.40 g 1.20 1.40 h 1.80 2.20 j 0.0 0.10 k 0.90 1.00 l 0.25 0.40 m 0.10 0.18 0 8 all dimensions in mm e b c note: 1. device mounted on fr-4 pcb, 1 inch x 0.85 inch x 0.062 inch; pad layout as shown on diodes inc. suggested pad la yout document ap02001, which can be found on our website at http://www.diodes.com/datasheets/ap02001.pdf. 2. no purposefully added lead.
ds30163 rev. 5 - 2 2 of 3 mmst4124 www.diodes.com electrical characteristics @ t a = 25 c unless otherwise specified characteristic symbol min max unit test condition off characteristics (note 3) collector-base breakdown voltage v (br)cbo 30 ? v i c = 10 a, i e = 0 collector-emitter breakdown voltage v (br)ceo 25 ? v i c = 1.0ma, i b = 0 emitter-base breakdown voltage v (br)ebo 5.0 6.0 v i e = 10 a, i c = 0 collector cutoff current i cbo ? 50 na v cb = 20v, i e = 0v emitter cutoff current i ebo ? 50 na v eb = 3.0v, i c = 0v on characteristics (note 3) dc current gain h fe 120 60 360 ? ? i c = 2.0ma, v ce = 1.0v i c = 50ma, v ce = 1.0v collector-emitter saturation voltage v ce(sat) ? 0.30 v i c = 50ma, i b = 5.0ma base-emitter saturation voltage v be(sat) ? 0.95 v i c = 50ma, i b = 5.0ma small signal characteristics output capacitance c obo ? 4.0 pf v cb = 5.0v, f = 1.0mhz, i e = 0 input capacitance c ibo ? 8.0 pf v eb = 0.5v, f = 1.0mhz, i c = 0 small signal current gain h fe 120 480 ? v ce = 1.0v, i c = 2.0ma, f = 1.0khz current gain-bandwidth product f t 300 ? mhz v ce = 20v, i c = 10ma, f = 100mhz ordering information (note 4) device packaging shipping MMST4124-7 sot-323 3000/tape & reel notes: 3. short duration test pulse used to minimize self-heating effect. 4. for packaging details, go to our website at http://www.diodes.com/datasheets/ap02007.pdf. 5. for lead free/rohs compliant version part number, please add "-f" suffix to the part number above. example : MMST4124-7-f . marking information k1b ym k1b = product type marking code, ex: k1h = mmsta05 ym = date code marking y = year ex: n = 2002 m = month ex: 9 = september date code key year 1998 1999 2000 2001 2002 2003 2004 2005 2006 2007 2008 2009 code jklmnpr st u vw month jan feb march apr may jun jul aug sep oct nov dec code 1234567 89 o nd
ds30163 rev. 5 - 2 3 of 3 mmst4124 www.diodes.com 0.1 1 10 0.1 1 10 100 1000 v , base-emitter (v) be(sat) saturation voltage i , collector current (ma) c fig. 5, typical base-emitter saturation voltage vs. collector current i c i b =10 0.01 0.1 1 0.1 1 10 100 1000 v , collector-emitter (v) ce(sat) saturation voltage i , collector current (ma) c fig. 4, typical collector-emitter saturation voltage vs. collector current i c i b =10 1 10 1000 100 0.1 1 10 1000 100 h , dc current gain fe i , collector current (ma) c fig. 3, typical dc current gain vs collector current t = -25c a t = +25c a t = 125c a v = 1.0v ce 0 5 1 5 10 0.1 1 10 100 c , input capacitance (pf) ibo c , output capacitance (pf) obo v , collector-base voltage (v) cb fig. 2, input and output capacitance vs. collector-base voltage cibo cobo f=1mhz 0 50 100 25 50 75 100 125 150 175 200 p , power dissipation (mw) d t , ambient temperature (c) a fig. 1, max power dissipation vs ambient tem p erature 150 200 250 300 350 0
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